Education

1980-1984	Ph.D, Physics and Mathematics, I. Kurchatov Institute of Atomic Energy Moscow, Russia
1974-1979	B.Sc, M.S, Institute "GIREDMET", Moscow,Institute of Foreign Languages

Biography

 Professor, Doctor of Sciences and Dr.-Eng. Paata J. Kervalishvili (born - 1949) is Professor at department of Physics within Georgian Technical University, as well as Professor of faculty of exact and natural sciences of Tbilisi State University.

From 1970 until 1992 Prof. Kervalishvili was researcher and Director in different research and technology centers within the Middle Machinery Ministry (State Committee for Atomic Energy) of former USSR main body of the Soviet atomic energy and weapon industry (Institute of Stable Isotopes, The Soviet State institute of Rare Metals, Sukhumi Physical-Technical Institute, I. Kurchatov Institute of Atomic Energy) In 1994 – 1999, after one year in Parliament of Georgia he worked in Government of Georgia (as Secretary of State in the State Committee for Science and Technology, Assistant to President of the State in Science and Technology) 

A condensed matter physicist with Technical University Diploma, Dr. Kervalishvili has served in several directions of physics and technology such as: condensed matter, molecular and quantum physics, nuclear and laser technologies, novel materials, sensory systems, energy and information technologies. He is author of more than 450 scientific publications, books, manuals, and inventions and among them scientific bestsellers published by IOS Press, Pergamon Press, Springer.

Prof. Kervalishvili is a member of more than 10 top level academies and research councils and among them: full member of American, European, Russian and Georgian scientific academies, Georgian Engineering academy and other distinguish organizations. Currently he is the President of Georgian Academy of Natural Sciences and President of Euro Mediterranean Academy of Arts and Sciences.

Dr. Kervalishvili received more than 20 prestigious prizes and state orders and among them USSR, Georgia, Germany, Italy, different public organizations, scientific academies and universities (USA, Greece, Russia, Turkey, Romania, etc.)  

As a Director and coordinator of several (more than 90) World Bank, EU, ISTC, etc. projects and Chairman of International Forums and Conferences (more than 60), as well as Professor of some well known European and American Universities he has the wide international experience.

P. Kervalishvili received his B.S. and M.S. in engineering physics from Georgian Technical University. The Soviet State institute of Rare Metals awarded him the title of Ph. D., and Dr.-Eng. in 1979, and Soviet atomic centre “Kurchatov Institute” – degree of Doctor of physics and mathematics (1985). He got USSR Professor State title in 1989.

Research Interest

Quantum physics, Sensory systems, Condensed matter

Scientific Activities

1. USSR State Award in Science and Technology (1978, 1983)
2. USSR Academy of Sciences Golden Medal (1979)
3. Order of Honor (Georgia, 1999)
4. Orders Golden Eagle and Peter the Great (2001, 2004)
5. Cross of Honor (2003)
6. V. Vernadsky Medal of Honor (2008) of Russian Academy of Natural Sciences, Badge of Honor (MIT), Medal of Honor (KPI), etc

Publications

1. Frenkel pairs and impurity-defect interactions in p-type silicon irradiated with fast electrons and gamma-rays at low temperatures, Materials Science Forum, vol. 258-263, no. PART 1, pp. 575–580, 1997.
2. Neutron alloying of silicon, a method of measuring the flux of slow neutrons, Soviet Atomic Energy, vol. 70, no. 5, pp. 430–431, 1991.
3. Neutron doping of silicon - method of measurement of thermal and epithermal neutron fluxes, Atomnaya Energiya, vol. 70, no. 5, pp. 349–350, 1991.
4. The behaviour of hydrogen, nitrogen and oxygen impurities in boron carbide and aluminium dodecaboride, Sensors and Actuators: B. Chemical, vol. 5, no. 1-4, pp. 261–263, 1991.
5. Isotopic effect in the reaction of materials with oxygen, Soviet Atomic Energy, vol. 68, no. 1, pp. 46–48, 1990.
6. Efficiency of neutron-absorbing materials on the basis of cadmium, Soviet Atomic Energy, vol. 63, no. 4, pp. 794–797, 1987.
7. EFFECT OF LASER RADIATION ON THE STRUCTURE OF THE SURFACE OF BORON CARBIDE CRYSTALS PRODUCED BY PLASMA ARC MELTING., Physics and chemistry of materials treatment, vol. 21, no. 5, pp. 490–491, 493, 1987.
8. The principle of recording neutrons with the AID of sensitive boron elements, Soviet Atomic Energy, vol. 62, no. 5, pp. 412–414, 1987.
9. STRUCTURE OF BORON FILMS PRODUCED BY LASER CHEMICAL REACTIONS IN THE FIELD OF THE PULSED CO//2 LASER., Physics and chemistry of materials treatment, vol. 21, no. 3, pp. 250–252, 1987.
10. LASER DEPOSITION OF MATTER FROM THE GAS PHASE AND MASS TRANSFER IN THE BEAM FIELD., Physics and chemistry of materials treatment, vol. 21, no. 3, pp. 253–255, 1987.
11. THERMODYNAMIC ANALYSIS OF THE RELATIONSHIP OF THE ANGLES BETWEEN INTERFACIAL SURFACES AND THE MELT SOLIDIFICATIONS CONDITIONS IN CRYSTAL GROWTH., Physics and chemistry of materials treatment, vol. 20, no. 3, pp. 221–224, 1986.
12. SOLIDIFICATION OF DROPLETS TRANSFERRED FROM A LASER-HEATED TARGET ON A SINGLE CRYSTAL SUBSTRATE., Physics and chemistry of materials treatment, vol. 20, no. 1, pp. 19–21, 1986.
13. Determination of the mean inner potential of single-crystal lattices of boron-containing materials and its relation to the work function, Journal of The Less-Common Metals, vol. 117, no. 1-2, pp. 283–286, 1986.
14. ANALYSIS OF THE CONDITIONS OF GROWTH OF SINGLE CRYSTALS IN DIRECTIONAL SOLIDIFICATION BY SOLVING STEFAN'S PROBLEM., Physics and chemistry of materials treatment, vol. 18, no. 6, pp. 594–598, 1984.
15. FORMATION OF OXYGEN COMPLEXES IN GERMANIUM AS A RESULT OF HEAT TREATMENT., Soviet physics. Semiconductors, vol. 18, no. 9, pp. 1077–1078, 1984.
16. Effect of lithium on hot-pressed boron-carbide parts, Soviet Atomic Energy, vol. 57, no. 1, pp. 489–491, 1984.
17. INFLUENCE OF HEAT TREATMENT ON CARRIER RECOMBINATION IN GERMANIUM CONTAINING DISLOCATIONS WITH DENSITIES FROM 0 TO 10**5 cm** minus **2., Soviet physics. Semiconductors, vol. 16, no. 8, pp. 938–939, 1982.
18. REACTION BETWEEN LITHIUM AND MULTICHARGED ACCEPTORS IN GERMANIUM/ VZAIMODEISTVIE LITIYA S MNOGOZARYADNYMI AKTSEPTORAMI V GERMANII., IZV AKAD NAUK SSSR NEORG MATER, vol. V 18, no. N 5, pp. 715–719, 1982.
19. Behavior of an Antimony Impurity in Germanium., Neorganiceskie materialy, vol. 18, no. 2, pp. 189–191, 1982.
20. RADIATION DEFECTS IN COPPER-DOPED GERMANIUM., Soviet physics. Semiconductors, vol. 15, no. 7, pp. 727–729, 1981.
21. Behavior of gases in aluminum boride, Soviet Atomic Energy, vol. 50, no. 5, pp. 314–315, 1981.
22. INTERACTION OF RADIATION DEFECTS WITH LITHIUM IMPURITY ATOMS IN GERMANIUM., Soviet physics. Semiconductors, vol. 15, no. 1, pp. 55–57, 1981.
23. On the Possibility of Improving the Stirring of the Melt During Crystal Growth by the Czochralski Method., Neorganiceskie materialy, vol. 16, no. 10, pp. 1727–1732, 1980.
24. Behavior of a Silver Impurity in Germanium., Neorganiceskie materialy, vol. 15, no. 12, pp. 2101–2104, 1979.
25. Effect of Impurities and Their Complexes on the Structure of Single Crystals Grown by the Czochralski Method., Tsvetnye Metally, no. 10, pp. 61–63, 1979.