Publications

Books

C. Bayram. III-nitride Optoelectronic Devices: AlGaInN Gap Engineering from Ultraviolet and Visible Wavelengths towards Terahertz Regime; ProQuest, UMI Dissertation Publishing, 2012; ISBN-10: 1249058430; ISBN-13: 978-1249058434.

Book Chapters

C. Bayram, D. K. Sadana, and M. Razeghi, AlGaN-based Intersubband Device Technology. In The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, M. Razeghi. L. Esaki, and K. von Klitzing, Eds., SPIE Press, Bellingham, WA, pp. 175-206 (2013).

Journal Articles

  1. J. Kim† & C. Bayram† († equal contribution), H. Park, C.-W. Cheng, C. Dimitrakopoulos, J. A. Ott, K. B. Reuter, S. W. Bedell, and D.K. Sadana, “Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene,” Nat. Commun. 5:4836 (2014).
  2. C. Bayram, J. Ott, K.-T. Shiu, C.-W. Cheng, Y. Zhu, J. Kim, M. Razeghi, and D.K. Sadana, “Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy,” Adv. Funct. Mater. 24 (28), 4492 (2014). (FRONTISPECE COVER ARTICLE)
  3. S. W. Bedell, C. Bayram, K. Fogel, P. Lauro, J. Kiser, J. Ott, Y. Zhu, and D. Sadana, "Vertical  Light-Emitting Diode Fabrication by Controlled Spalling," Applied Physics Express 6 (11), 112301 (2013).
  4. D. Shahrjerdi, S. W. Bedell, C. Bayram, C. C. Lubguban, K. Fogel, P. Lauro, J. A. Ott, M. Hopstaken, M. Gayeness, and D. Sadana, "Ultra-Light High-Efficiency Flexible  InGaP/(In)GaAs  Tandem  Solar  Cells  on  Plastic,"  Advanced  Energy Materials 3 (5), 566–571 (2013). (INSIDE COVER ARTICLE)
  5. Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C.Bayram, Y. Bai, and M. Razeghi, "Near Miliwatt Power AlGaN-based Ultraviolet Light Emitting Diodes based on Lateral Epitaxial Overgrowth of AlN on Si(111),"  Applied Physics Letters 102, 011106 (2013).
  6. D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. Ott, and D. K. Sadana, "High-Efficiency Thin- Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology,"               Applied Physics  Letters 100, 053901 (2012). (TOP              20                Most Downloaded  Articles) (EDITOR’S PICK 2012)
  7. C. Bayram, "High quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions," Journal of Applied Physics 111, 013514 (2012).
  8. C. Bayram, Z. Vashaei, and M. Razeghi, "Reliability in room-temperature negative differential resistance characteristics of low-aluminium-content AlGaN/GaN double-barrier resonant tunneling diodes," Applied Physics Letters 97, 181109 (2010).
  9. Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi. “Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices,” Applied Physics Letters 97, 121918 (2010).
  10. C. Bayram, Z. Vashaei, and M. Razeghi, “Room temperature  negative differential resistance characteristics of polar III-nitride resonant tunneling diodes,” Applied Physics Letters 97, 092104 (2010).
  11. E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi, "Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free- standing GaN substrates," Applied Physics Letters 96, 261107 (2010).
  12. Z. Vashaei, E. Cicek, C. Bayram, R. McClintock, and M. Razeghi, "GaN avalanche photodiodes grown on m-plane freestanding GaN substrate," Applied Physics Letters 96, 201908 (2010).
  13. Z. Vashaei, C. Bayram, and M. Razeghi, “Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature,” Journal of Applied Physics 107, 083505 (2010).
  14. C. Bayram, Z. Vashaei, and M. Razeghi, “AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition,” Applied Physics Letters 96, 042103 (2010).
  15. C. Bayram, N. Péré-Laperne, and M. Razeghi, “Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition,” Applied Physics Letters 95, 201906 (2009).
  16. N. Péré-Laperne, C. Bayram, L. Nguyen-Thê, R. McClintock, and M. Razeghi, "Tunability of Intersubband absorption from 4.5 to 5.3 µm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition," Applied Physics Letters 95, 131109 (2009). 
  17. Bayram  and  M.  Razeghi,  "ULTRAVIOLET  DETECTORS:  Nitrides  push performance of UV photodiodes," Laser Focus World 45(9), p. 47-51 (2009).
  18. C. Bayram, D. Rogers, F. H. Teherani, and M. Razeghi, "Fabrication and Characterization of Novel Hybrid Green LEDs Based on Substituting n-type ZnO for n-type GaN in an Inverted p-n Junction," Journal of Vacuum Science and Technology B 27, 1784 (2009).
  19. V. E. Sandana, D. J. Rogers, F. H. Teherani, R. McClintock, C.Bayram, M. Razeghi, H.-J. Drouhin, M.C. Clochard, V. Sallet, G. Garry, and F. Falyouni, "Comparison of ZnO Nanostructures Grown Using pulsed layer deposition, metalorganic chemical vapor deposition, and physical vapor transport", Journal of Vacuum Science and Technology B 27, 1678 (2009).
  20. C. Bayram, N. Péré-laperne, R. McClintock, B. Fain and M. Razeghi, "Pulsed Metalorganic Chemical Vapor Deposition of High Quality AlN/GaN Superlattices for Near-Infrared Intersubband Transitions," Applied Physics Letters 94, 121902 (2009).
  21. C. Bayram and M. Razeghi, "Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra," Applied Physics A: Materials Science & Processing 96, 403 (2009).
  22. C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, "Comprehensive study of blue and green multi-quantum-well light emitting diodes grown on conventional and lateral epitaxial overgrowth GaN," Applied Physics B: Lasers and Optics 95,307 (2009).
  23. J. L. Pau, C.  Bayram,  P. Giedraitis, R. McClintock, and M. Razeghi, “GaN nanostructured p-i-n photodiodes,” Applied Physics Letters 93, 221104 (2008).
  24. C. Bayram, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer, and D. Silversmith, “High Quantum Efficiency Back-illuminated GaN Avalanche Photodiodes,” Applied Physics Letters 93, 211107 (2008).
  25. C. Bayram, F. H. Teherani, D. Rogers, and M. Razeghi, “A hybrid green light- emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum wells/p-GaN,” Applied Physics Letters 93, 081111 (2008).
  26. C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, “Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type delta- doping,” Applied Physics Letters 92, 241103 (2008).
  27. C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, “Delta-doping optimization for high quality p-type GaN,” Journal of Applied Physics 104, 083512 (2008).
  28. J. L. Pau, C. Bayram, R. McClintock, D. Silversmith, and M. Razeghi, “Back- illuminated separate absorption and multiplication GaN avalanche photodiodes” Applied Physics Letters 92, 101120 (2008).
  29. J. L. Pau, R. McClintock, C. Bayram, K. Minder, D. Silversmith, and M. Razeghi, “High Optical Response in Forward Biased (In,Ga)N-GaN MultiquantumWell Diodes under Barrier Illumination,” IEEE Journal of Quantum Electronics 44, 346 (2008).
  30. K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, and D. Silversmith, “Scaling in GaN avalanche photodiodes designed for back- illumination,” Applied Physics Letters 91, 073513 (2007).
  31. J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi,  E. Munoz, and D. Silversmith, “Gieger-mode operation of back-illuminated GaN avalanche photodiodes,” Applied Physics Letters 91, 041104 (2007).
  32. R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi, “Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes,” Applied Physics Letters 90, 141112 (2007).

Conference Papers (listed in the International Science Index database)

  1. S. W. Bedell, D. Shahrjerdi, K. Fogel, P. Lauro, C. Bayram, B. Hekmatshoar, N. Li, J. Ott, and D. Sadana, “Advanced flexible electronics: challenges and opportunities,” Proc. SPIE 9083, 90831G (2014).
  2. D. Shahrjerdi, S. W. Bedell, C. Bayram, and D. K. Sadana, "Flexible InGaP/(In)GaAs Tandem Solar Cells with Very High Specific Power," 39th IEEE Photovoltaic Specialists Conference Proceedings  (2013).
  3. C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, F.H. Teherani, D.J. Rogers, V. E. Sandana, P. Bove, Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, and M. Razeghi, "Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN- based devices," Proc. SPIE 8626, 86260L (2013).
  4. C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, Z. Vashaei, E. Cicek, R. McClintock, and M. Razeghi, "Gallium Nitride on Silicon for Cheap, Scalable, and Sustainable Photonics," Proc. SPIE 8631, 863112 (2013).
  5. D. Shahrjerdi, S. W. Bedell, B. Hekmatshoar, C. Bayram, and D. Sadana, "New Paradigms for Cost-Effective III-V Photovoltaic Technology," ECS Transactions, 50 (40) 15-22 (2013).
  6. D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. A. Ott, and D. K. Sadana, "High-Efficiency Thin-Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology", 38th IEEE Photovoltaic Specialists Conference Proceedings  (2012).
  7. C. Bayram, D. K. Sadana, Z. Vashaei, and M. Razeghi, “Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance”, Proc. SPIE 8268, 826827 (2012).
  8. Z. Vashaei, C. Bayram, R. McClintock, and M. Razeghi, “Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes”, Proc. SPIE 7945, 79451A (2011).
  9. M. Razeghi, C. Bayram, Z. Vashaei, E. Cicek, and R. McClintock, “III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices”, 23rd Annual Meeting of the IEEE Photonics- Society Denver, CO, Nov. 07-11 (2010).
  10. R. McClintock, E. Cicek, Z. Vashaei, C. Bayram, M. Razeghi, and Melville P. Ulmer, “III-Nitride Based Avalanche Photo Detectors”, Proc. SPIE 7780, 77801B (2010).
  11. E. Cicek, Z. Vashaei, C. Bayram, R. McClintock, and M. Razeghi, “Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates”, Proc. SPIE 7780, 77801P (2010).
  12. M. Razeghi, C. Bayram, R. McClintock, F.H. Teherani, D.J. Rogers, and V.E. Sandana, “Novel Green Light Emitting Diodes: Exploring Droop-free Lighting Solutions for a Sustainable Earth”, Journal of Light Emitting Diodes 2 (1) 1-33 (2010).
  13. M. Razeghi and C. Bayram, “Material and design engineering of (Al)GaN for high- performance avalanche photodiodes and intersubband applications,” Proc. SPIE 7366, 73661F (2009).
  14. C. Bayram, B. Fain, N. Péré-Laperne, R. McClintock, and M. Razeghi, “Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions,” Proc. SPIE 7222, 722212 (2009).
  15. R. McClintock, J. L. Pau Vizcaino, C. Bayram, B. Fain, P. Giedraitis, M. Razeghi, and M. P. Ulmer,”III-nitride avalanche photodiodes,” Proc. SPIE 7222, 72220U (2009).
  16. C. Bayram, D. J. Rogers, F. Hosseini Teherani, and M. Razeghi, “Hybrid green LED based on nZnO/MQWInGaN/pGaN,” Proc. SPIE 7217, 72170P (2009).
  17. J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, “GaN-based nanostructured photodetectors,” Proc. SPIE 7222, 722214 (2009).
  18. R. McClintock, J. L. P. Vizcaino, K. Minder, C. Bayram and M. Razeghi, “III- nitride photon counting avalanche photodiodes,” Proc. SPIE 6900, 69000N (2008).
  19. K. Minder, F. H. Teherani, D. Rogers, C. Bayram, R. McClintock, P. Kung, and M. Razeghi, “Etching of ZnO towards the development of ZnO homostructure LEDs,” Proc. SPIE 6474, 64740Q (2007).
  20. P. Kung,  R. McClintock, J. L. P. Vizcaino, K. Minder, C. Bayram,  and M. Razeghi, “III-nitride avalanche photodiodes,” Proc. SPIE 6479, 64791J (2007).
  21. R. McCLintock, K. Minder, A. Yasan, C. Bayram, F. Fuchs, P. Kung, and M. Razeghi, “Solar-blind avalanche photodiodes,” Proc. SPIE 6127, 61271D (2006).
  22. C. Bayram, S. Olcum, M. N. Senlik, and A. Atalar, “Bandwidth improvement in a cMUT array with mixed sized elements,” Proc. IEEE Ultrason. Symp., pp. 1956- 1959. (2005).
  23. S. Olcum, M. N. Senlik, C. Bayram and A. Atalar, “Design charts to maximize the gain-bandwidth product of capacitive micromachined ultrasonic transducers,” Proc. IEEE Ultrason. Symp. Pp. 1941-1944. (2005).

Talks & Presentations

  1. (INVITED) C. Bayram, “Vertical Thinking in Light Emitting Diodes” ECE Colloquium, University of Illinois at Urbana-Champaign, Urbana, IL, USA, Nov. 13, 2014.
  2. C. Bayram, J. Kim, H. Park, C.-W. Cheng, C. Dimitrakopoulos, J. Ott, K.B. Reuter, S.W. Bedell, and D. K. Sadana, “Thin-film Blue Light Emitting Diodes via Revolutionary GaN-on-Graphene Technology,” International Symposium on Graphene Devices (ISGD-4), Bellevue, WA, USA, Sep. 21-25, 2014.
  3. (INVITED) C. Bayram, “Gallium nitride compound semiconductors for ultraviolet, visible, and terahertz photonics” 2nd International Conference and Exhibition on Lasers, Optics, and Photonics, Philadelphia, PA, USA, Sep. 08-10, 2014.
  4. (INVITED)  C.  Bayram,  “LED  Lighting”  International  Summer  School  on Advanced TV Technologies, Antalya, TURKEY, Aug. 25-29, 2014.
  5. C. Bayram, J. Kim, H. Park, C.-W. Cheng, C. Dimitrakopoulos, J. Ott, K.B. Reuter, S.W. Bedell, and D. K. Sadana, “Revolutionary GaN-on-Graphene Technology,” 5th International Symposium on Growth of III-Nitrides, Atlanta, GA, USA, May 18-22, 2014.
  6. C. Bayram, J. Ott, K.-T. Shiu, C.-W. Cheng, Y. Zhu, J. Kim, M. Razeghi, and D.K. Sadana, “Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy,” 5th International Symposium on Growth of III-Nitrides, Atlanta, GA, USA, May 18-22, 2014.
  7. (INVITED) D. K. Sadana, N. Li, C. Bayram, K.-T. Shiu, and C.-W. Cheng, " Technologies for high speed III-V optical links on silicon optoelectronics," International Conference and Exhibition on Lasers, Optics & Photonics, Hilton San Antonio Airport, TX, USA, Oct. 07-09 (2013).
  8. (INVITED) C. Bayram, "Renewable Energy and Energy-Efficiency in Turkey: Research and Development Trends," 2nd TUBITAK Workshop for Turkish Scientist Residing Abroad (hosted by Scientific and Technological Research Council of Turkey), Grand Cevahir Otel, Istanbul, TURKEY, July 4-5 (2013).
  9. D. Shahrjerdi, S. W. Bedell, C. Bayram, and D. K. Sadana, " Flexible InGaP/(In)GaAs Tandem Solar Cells with Very High Specific Power," 39th IEEE Photovoltaic Specialists Conference,  Tampa, Florida, USA, June 16-21 (2013).
  10. (INVITED) C. Bayram, "Gallium Nitride Compound Semiconductors for Ultraviolet, Visible, and Terahertz Photonics," Special Materials Science & Engineering Seminar, Columbia University, Morningside Campus, NY, USA, June 12 (2013).
  11. (INVITED) C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, F.H. Teherani, D.J. Rogers, V. E. Sandana, P. Bove, Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, and M. Razeghi, "Engineering light- emitting diodes with inexpensive materials: Integrating ZnO and Si into solid state lighting," SPIE Photonics West, San Francisco, CA, USA, February 2-7 (2013).
  12. (INVITED) C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, Z. Vashaei, E. Cicek, R. McClintock, and M. Razeghi, "Gallium Nitride on Silicon for Cheap, Scalable, and Sustainable Photonics," SPIE Photonics West, San Francisco, CA, USA, February 2-7 (2013).
  13. (INVITED) D. K. Sadana, S.W. Bedell, D. Shahrjerdi, B. Hekmatshoar, N. Li, C. Bayram, and J. Kim, "Advanced PV Technologies: Challenges & Opportunities," SPIE Photonics West, San Francisco, CA, USA, February 2-7 (2013).
  14. (INVITED) D. Shahrjerdi, S. W. Bedell, B. Hekmatshoar, C. Bayram, and D. Sadana, "New Paradigms for Cost- Effective III-V Photovoltaic Technology," Pacific Rim Meeting on Electrochemical and Solid-State Science, Honolulu, Hawaii, USA, October 7-12 (2012).
  15. C. Bayram, Z. Vashaei, R. McClintock, D.K. Sadana, and M. Razeghi, "AlXGa1- XN-based engineered intersubband devices," Infrared Optoelectronics: Materials & Devices (MIOMD-XI) Conference, Chicago, IL, USA, September 4-8 (2012).
  16. D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. A. Ott, and D. K. Sadana, "High-Efficiency Thin-Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology", 38th IEEE Photovoltaic Specialists Conference, Austin, Texas, USA, June 3-8 (2012).
  17. (INVITED) C. Bayram, “Applied Photonics for a Sustainable Earth: High Efficiency Light Emitting Diodes and Solar Cells,” TASSA Annual Conference, University of Maryland, College Park, MD, USA,  March 3-4 (2012).
  18. (INVITED) C. Bayram, D. K. Sadana, Z. Vashaei, and M. Razeghi, “Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance,” SPIE Photonics West, San Francisco, CA, USA, January 22-27 (2012).
  19. (INVITED) C. Bayram and M. Razeghi, "AlGaInN gap engineering from ultraviolet and visible wavelengths towards terahertz regime," ICDD Spring Meetings, Pennsylvania, USA, March 17 (2011).
  20. (INVITED) C. Bayram and M. Razeghi, "III-Nitride Optoelectronic Devices," ICDD Spring Meetings, Pennsylvania, USA, March 15 (2011).
  21. Z. Vashaei, C. Bayram, R. McClintock, and M. Razeghi, “Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes”, SPIE Photonics West, San Francisco, CA, USA, January 22-27 (2011).
  22. E. Cicek, Z. Vashaei, C. Bayram, R. McClintock, and M. Razeghi, "Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates", SPIE Optics + Photonics, San Diego, California, USA, August 1-5 (2010).
  23. (INVITED) R. McClintock, E. Cicek, Z. Vashaei, C. Bayram, M. Razeghi, and Melville P. Ulmer, "III-Nitride Based Avalanche Photo Detectors,"  SPIE            Optics  + Photonics, San Diego, USA, August 1-5 (2010).
  24. M. Razeghi, C. Bayram, and Z. Vashaei,“III-Nitride intersubband absorption devices and resonant tunneling diodes,” 3rd International Symposium on Growth of III-Nitrides (ISGN-3) Corum - Montpellier, France -- July 4-8 (2010).
  25. M. Razeghi, Z. Vashaei, and C. Bayram,“High quality metal-organic chemical vapor deposition of (Al)GaN-based resonant tunneling diodes,” 3rd International Symposium on Growth of III-Nitrides (ISGN-3) Corum - Montpellier, France -- July 4-8 (2010).
  26. (INVITED) M. Razeghi, C. Bayram, R. McClintock, F.H. Teherani, D.J. Rogers, and V.E. Sandana, “Novel Green Light Emitting Diodes: Exploring Droop-free Lighting Solutions for a Sustainable Earth”, LED 2010: The 4th International Conference on LED and Solid State Lighting, COEX (Seoul), Korea, Feb. 3-5 (2010).
  27. (INVITED) C. Bayram, F. H. Teherani, D. Rogers, and M. Razeghi, “Novel Green Light Emitting Diodes”, Dow Chemical Company Sustainability Innovation Student Challenge Recognition Event, University of Michigan Ann Arbor, Oct. 19 (2009).
  28. (INVITED) F. H. Teherani, C. Bayram, D. J. Rogers, M. Razeghi, and R. Mcclintock, "Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction",2009 Annual Meeting of IEEE Photonics Society, Antalya - Belek,Turkey, Oct. 4-8 (2009).
  29. (INVITED) C. Bayram and M. Razeghi, "III-Nitride Optoelectronic Devices", 2009 Annual Meeting of IEEE Photonics Society, Antalya - Belek,Turkey, Oct. 4- 8 (2009).
  30. (INVITED) C. Bayram, F. H. Teherani, D. Rogers, R.Mcclintock, and M. Razeghi, "Novel Green Light Emitting Diodes: Innovating Droop-free Lighting Solutions for Sustainable Earth", 2009 symposium of the Chicago AIChE (American Institute of Chemical Engineers), Chicago, IL, Oct. 4-5 (2009).
  31. (INVITED) M. Razeghi, C. Bayram, R. McClintock and N. Péré-Laperne, "III- Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices”, AFOSR Joint Electronics Program Review, Arlington, VA, May 27 (2009).
  32. C. Bayram, D. J. Rogers, F. Hosseini Teherani, and M. Razeghi, “Novel Hybrid Green LEDs Based on Substituting n-type ZnO for n-type GaN in an Inverted p-n Junction,” Proc. of the 5th International Workshop on ZnO and Related Materials, Sept. 22-24, Michigan (2008).
  33. V. E. Sandana, D. J. Rogers, F. H. Teherani, R. McClintock, C. Bayram M. Razeghi, H.-J. Drouhin, V. Sallet, G. Garry, F. Falyouni,, "Comparison of ZnO Nanostructures Grown Using PLD, MOCVD & PVT," Proc. of the 5th Int. Workshop on ZnO and Related Materials, Sept. 22-24, Michigan (2008).
  34. (INVITED) M. Razeghi, J. L. Pau, C. Bayram, B. Fain, P. Giedraitis, and R. McClintock,“ UV Single Photon Detection Based on III-Nitride Geiger Mode Avalanche Photodiodes,” 2nd International Symposium on Growth of III-Nitrides (ISGN-2). Laforet Shuzenji Izu, Japan -- July 6 (2008).
  35. (INVITED) M. Razeghi, J. L. Pau, C. Bayram, R. McClintock, K. Kim, P. Giedraitis, and B. Fain, “GaN Avalanche Photodiodes and Green Emitters,” 2008 AFRL-AFOSR Nanotechnology Initiative Review. Dayton, OH -- May 6 (2008).
  36. (INVITED) R. McClintock, J. L. P. Vizcaino, K. Minder, C. Bayram and M. Razeghi, “III-nitride photon counting avalanche photodiodes,” SPIE Photonics West, San Francisco, CA, USA, January 20-25 (2008).
  37. (INVITED) K. Minder, F. H. Teherani, D. Rogers, C. Bayram, R. McClintock, P. Kung, and M. Razeghi, “Etching of ZnO towards the development of ZnO homostructure LEDs,” SPIE Photonics West, San Francisco, CA, USA, January 20-25 (2008).

 

Can Bayram

Assistant Professor of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
Champaign, Illinois, USA
Phone: +1 (847) 863-6991
E-mail: cbayram@illinois.edu